Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A), L2259
- https://doi.org/10.1143/jjap.27.l2259
Abstract
GaAs(001) surfaces during MBE growth was observed by scanning microprobe RHEED. A microprobe electron gun for RHEED was installed in an MBE chamber. Using intensity variation of RHEED patterns produced by the scanning of an incident beam, we obtained a microscopic image highly sensitive to the surface structure. Scanning reflection electron images revealed granular features over the whole surface, which came from small undulations on the surface of the MBE grown layer. The undulation became larger along [1̄10] direction as growth proceeded. No contrast was observed in the secondary electron images.Keywords
This publication has 7 references indexed in Scilit:
- Reflection electron microscopic observation of high-temperature grown GaAs surfaces of molecular beam epitaxyApplied Physics Letters, 1987
- Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffractionApplied Physics Letters, 1987
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- Microscopy of surfaces and applications to molecular beam epitaxyUltramicroscopy, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971