Thermal Effects in Amorphous-Semiconductor Switching
- 15 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10), 418-420
- https://doi.org/10.1063/1.1653754
Abstract
It is shown that a pure thermal model, in the absence of significant heating of the electrodes, gives no negative differential resistance and no high‐current filaments. When some electronic effects, such as space charge, narrow Schottky barriers, or field‐enhanced conductivity, are explicitly introduced, negative‐resistance regions and filamentary conduction exists.Keywords
This publication has 23 references indexed in Scilit:
- On the preswitching phenomena in semiconducting glassesSolid State Communications, 1971
- Thermal Mechanism of the Switching PhenomenonPhysica Status Solidi (a), 1970
- On the theory of switching phenomena in semiconducting glassesPhysica Status Solidi (a), 1970
- A qualitative theory of electrical switching processes in monostable amorphous structuresJournal of Non-Crystalline Solids, 1970
- Mechanism of threshold switching in semiconducting glassesJournal of Non-Crystalline Solids, 1970
- Thermal switching in semiconducting glassesJournal of Non-Crystalline Solids, 1970
- THRESHOLD SWITCHING AND THERMAL FILAMENTS IN AMORPHOUS SEMICONDUCTORSApplied Physics Letters, 1970
- Preswitching behaviour of amorphous chalcogenide semiconductor filmsElectronics Letters, 1970
- Thermal breakdown and switching in chalcogenide glassesInternational Journal of Electronics, 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968