Anomalous ESR Line Width of Phosphorus Doped Silicon in the Metallic Conduction Region
- 1 June 1966
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 21 (6), 1221
- https://doi.org/10.1143/jpsj.21.1221
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Dependence of ESR Line Width on Donor Concentration in SiliconJournal of the Physics Society Japan, 1965
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- Antiferromagnetic Resonance AbsorptionProgress of Theoretical Physics, 1962