Formation of palladium silicide by rapid thermal annealing
- 1 November 1984
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 35 (3), 141-144
- https://doi.org/10.1007/bf00616966
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Growth kinetics and diffusion mechanism inSiPhysical Review B, 1983
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- A study of Pd2Si films on silicon using Auger electron spectroscopySolid-State Electronics, 1976
- Formation kinetics and structure of Pd2Si films on SiSolid-State Electronics, 1973