InGaAs/InP superlattice mixing induced by Zn or Si diffusion
- 19 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12), 1051-1053
- https://doi.org/10.1063/1.100406
Abstract
Recent studies have shown that Zn diffusion preferentially induces mixing (interdiffusion) of In and Ga in unstrained InGaAs/InP superlattices, with little diffusion of the anions. In the present study, a 3.1% lattice mismatch is accommodated in the mixed superlattice with no observable defects in layers on the order of the predicted critical layer thickness. At high concentrations, Zn resides preferentially in the InP layers in the form of Zn3P2. In marked contrast to this behavior of Zn, Si diffusion is observed to cause comparable interdiffusion on the cation and anion sublattices within a narrow range of dopant concentration. This result is at odds with some recent mixing models and is consistent with a divacancy mixing mechanism.Keywords
This publication has 12 references indexed in Scilit:
- Disordering of InGaAs-InP quantum wells by Si implantationApplied Physics Letters, 1988
- Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structuresApplied Physics Letters, 1988
- Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAsApplied Physics Letters, 1988
- Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusionSemiconductor Science and Technology, 1987
- Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal AnnealingJapanese Journal of Applied Physics, 1987
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- X-ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlatticesJournal of Applied Physics, 1987
- Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1987
- Diffusion and electrical properties of silicon-doped gallium arsenideJournal of Applied Physics, 1985
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974