Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE
- 1 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 59 (1-3), 84-87
- https://doi.org/10.1016/s0921-5107(98)00328-6
Abstract
No abstract availableKeywords
Funding Information
- Russian Foundation for Basic Research (.97-02-18199)
- Bundesministerium für Bildung und Forschung (13N6809/7)
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