Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors
- 1 November 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (11R)
- https://doi.org/10.1143/jjap.34.5943
Abstract
The microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs.Keywords
This publication has 22 references indexed in Scilit:
- Effects of pressure on the formation of phosphorus-doped microcrystalline silicon films deposited by radio-frequency glow dischargeJournal of Applied Physics, 1995
- Novel Structure for Measuring the Density-of-State Distribution of High-Resistivity Semiconductor Films by Isothermal Capacitance Transient SpectroscopyJapanese Journal of Applied Physics, 1994
- Microcrystalline silicon deposited by glow discharge decomposition of heavily diluted silaneMaterials Chemistry and Physics, 1992
- The Physics of Plasma Deposition of Microcrystalline SiliconMRS Proceedings, 1992
- Control of silicon network structure in plasma depositionJournal of Non-Crystalline Solids, 1989
- The physics of amorphous-silicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film GrowthMRS Proceedings, 1988
- a-Si:H TFT Driven Linear Image SensorMRS Proceedings, 1987
- Laser annealing of glow discharge amorphous siliconJournal of Non-Crystalline Solids, 1980
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968