Microcrystalline silicon deposited by glow discharge decomposition of heavily diluted silane
- 31 October 1992
- journal article
- review article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 32 (3), 273-279
- https://doi.org/10.1016/0254-0584(92)90211-p
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Amorphous-silicon thin-film transistors with very high field-effect mobilityIEEE Electron Device Letters, 1991
- TFT (thin film transistor) cell technology for 4 Mbit and more high density SRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- A high-performance stacked-CMOS SRAM cell by solid phase growth techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- A half-micron SRAM cell using a double-gated self-aligned polysilicon PMOS thin film transistor (TFT) loadPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atomsApplied Physics Letters, 1988
- Lateral solid phase epitaxy in selectively P-doped amorphous Si filmsApplied Physics Letters, 1986
- Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substratesApplied Physics Letters, 1986
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983
- Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloysApplied Physics Letters, 1982
- Laser annealing of glow discharge amorphous siliconJournal of Non-Crystalline Solids, 1980