Incoherent light annealing of Mg implanted GaAs
- 1 January 1985
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 91 (1-2), 53-60
- https://doi.org/10.1080/00337578508222546
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Annealing of Mg implants in GaAs using incoherent radiationElectronics Letters, 1984
- Formation of p+-layer in GaAs by dual implantation of Zn and AsJapanese Journal of Applied Physics, 1983
- Correlation of electrical carrier and atomic profiles of Mg implants in GaAsJournal of Applied Physics, 1982
- Comparative studies of Mg implants in GaAs in different annealing environmentsNuclear Instruments and Methods, 1981
- Distribution of electrically active Mg implants in GaAsJournal of Applied Physics, 1980
- Electrical measurements and optical activation studies in Mg-implanted GaAsJournal of Applied Physics, 1979
- Mg and Be Ion Implanted GaAsJournal of Applied Physics, 1972