Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs
- 15 November 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 20 (10), 4150-4159
- https://doi.org/10.1103/physrevb.20.4150
Abstract
The electronic structure of the (110) surface of GaAs is analyzed using a surface-relaxation model as determined by recent low-energy-electron diffraction studies. A self-consistent pseudopotential calculation based on this model yields no intrinsic surface states within the fundamental band gap: a result not achieved in previous pseudopotential calculations. The calculations appear to be in good accord with recent photoemission measurements and we present an analysis of the surface-state energy spectra. In addition, our studies suggest that pseudopotential calculations coupled with angle-resolved photoemission measurements can be a sensitive probe of surface structural properties.Keywords
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