Hybrid growth of InGaAsP double-channel planar buried heterostructure lasers
- 1 May 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9), 811-813
- https://doi.org/10.1063/1.95892
Abstract
Separate confinement InGaAsP structures grown by gas-source molecular beam epitaxy have been used in conjunction with liquid phase epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.52–1.55 μm. These lasers show room-temperature threshold currents as low as 17 mA, external quantum efficiency as high as 27% per facet, and modulation bandwidth of 1.7–2.0 GHz. Single longitudinal mode operation under cw injection can be maintained up to 8 mW.Keywords
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