Growth of bismuth silicate films on Si and its dielectric properties

Abstract

Crystalline bismuth silicate films were grown on a Si substrate by metalorganic chemical vapor deposition. A 100 nm SiO₂ layer on Si was changed to bismuth silicate film by the reaction with a Bi and O₂ gas mixture. A deposition of less than 30 min formed a single‐crystalline phase, having a certain crystallographic relation with (100)Si substrate. The capacitance of the specimen has increased fivefold over that of the original specimen. The crystallinity of deposited films was increased markedly by heat treatment. At the same time, the capacitance of the specimen increased. However, the oxidation of the Si substrate and the formation of a Bi‐rich surface caused a drastic decrease in the capacitance of the specimen.