Photoconductivity in relaxation semiconductors including certain amorphous materials

Abstract

Analysis of the intrinsic photoconductivity spectrum for a conductivity-locked relaxation semiconductor is presented which provides a basis for extracting transport parameters from photoconductivity and absorption measurements. Decreasing photoconductivity in the strong absorption regime, as is observed for $a$-Si: H films, for example, is a predicted effect resulting from surface recombination.