Silicon double-island single-electron device
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 163-166
- https://doi.org/10.1109/iedm.1997.650293
Abstract
A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.Keywords
This publication has 7 references indexed in Scilit:
- Conductance oscillations of a Si single electron transistor at room temperaturePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islandsApplied Physics Letters, 1995
- Binary-decision-diagram deviceIEEE Transactions on Electron Devices, 1995
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994
- Complementary digital logic based on the ‘‘Coulomb blockade’’Journal of Applied Physics, 1992
- Single electron pump fabricated with ultrasmall normal tunnel junctionsPhysica B: Condensed Matter, 1991
- Single-electron transistors: Electrostatic analogs of the DC SQUIDSIEEE Transactions on Magnetics, 1987