Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (1), 10-13
- https://doi.org/10.1109/68.124858
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Theoretical gain in compressive and tensile strained InGaAs/InGaAsP quantum wellsApplied Physics Letters, 1991
- Strained multiple quantum well lasers emitting at 1.3 μm grown by low-pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxyApplied Physics Letters, 1991
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991
- High-power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Evidence of gain enhancement in long wavelength strained quantum well laser diodesElectronics Letters, 1991
- InGaAs/InP quantum well lasers with sub-mA threshold currentApplied Physics Letters, 1990
- Optimization of stripe width for low-threshold operation of quantum well laser diodesApplied Physics Letters, 1990
- Erratum: ‘‘Electronic structures of In1−xGaxAs-InP strained-layer quantum wells’’ [J. Appl. Phys. 6 5, 3096 (1989)]Journal of Applied Physics, 1989
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988