Outdiffusion of the main electron trap in bulk GaAs due to thermal treatment
- 15 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2), 161-163
- https://doi.org/10.1063/1.93028
Abstract
The profile of the main electron trap in bulk GaAs has been studied following thermal treatments with different capping and implantation conditions. Considerable departure from an idealized outdiffusion behavior (error function) is observed and this is attributed to surface As loss. The extent of the surface redistribution of EL2 is comparable to, or more important than that frequently observed for the Cr impurity.Keywords
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