Electronic structure of light-emitting porous Si
- 24 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (8), 1004-1006
- https://doi.org/10.1063/1.106503
Abstract
Characterization of light-emitting porous Si films with x-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.Keywords
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