Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFETs
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (4), 426-431
- https://doi.org/10.1109/16.2475
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The effect of holes on the injection-induced breakdown in n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- A simple method to characterize substrate current in MOSFET'sIEEE Electron Device Letters, 1984
- VIA-4 avalanche-induced breakdown mechanisms in short-channel MOSFETsIEEE Transactions on Electron Devices, 1982
- Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effectIEEE Transactions on Electron Devices, 1979
- A numerical model of avalanche breakdown in MOSFET'sIEEE Transactions on Electron Devices, 1978
- Source-drain breakdown in an insulated gate, field-effect transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973