LPE growth of Hg0.60Cd0.40Te from Te-rich solution
- 15 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (6), 457-458
- https://doi.org/10.1063/1.91159
Abstract
Hg0.60Cd0.40Te has been grown at atmospheric pressure using a liquid phase epitaxy (LPE) slider system. The compositions are uniform to within ±0.01 mole fraction across the layer and with depth into the layer except for a 3‐μm‐thick interdiffusion region. The layers are p type as grown with carrier concentration of 1017 cm−3 and are annealable to n type with a carrier concentration of 4×1015 cm−3.Keywords
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