Problems in elemental concentration depth profiling with an ion microprobe
- 28 February 1978
- journal article
- Published by Elsevier in International Journal of Mass Spectrometry and Ion Physics
- Vol. 26 (2), 163-172
- https://doi.org/10.1016/0020-7381(78)80019-9
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Evaluation of concentration-depth profiles by sputtering in SIMS and AESApplied Physics A, 1976
- Surface and thin film analysis of semiconductor materialsThin Solid Films, 1976
- Depth profiles of Au overlayers on Ag filmsJournal of Vacuum Science and Technology, 1976
- Depth-profiling of Cu-Ni sandwich samples by secondary ion mass spectrometryApplied Physics A, 1975
- Cesium profiles in silicon and in SiO2-Si double-layers as determined by SIMS measurementsApplied Physics A, 1975
- Theoretical and experimental aspects of secondary ion mass spectrometryVacuum, 1974
- Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layersRadiation Effects, 1974
- Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solidsRadiation Effects, 1973
- Secondary ion mass analysis, Technique for three-dimensional characterizationAnalytical Chemistry, 1972
- Ion Microprobe Mass AnalyzerJournal of Applied Physics, 1967