The built-in voltage and space charge layer capacitance of p−n junctions
- 31 May 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (5), 457-463
- https://doi.org/10.1016/0038-1101(74)90075-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973
- Comparison of theoretical and experimental values of the capacitance of diffused junctionsJournal of Applied Physics, 1972
- A fast algorithm for the calculation of junction capacitance and its application for impurity profile determinationSolid-State Electronics, 1972
- Transition region capacitance of diffused p-n junctionsIEEE Transactions on Electron Devices, 1971
- Numerical calculations of the capacitance of linearly graded Si p-n junctionsElectronics Letters, 1969
- The capacitance of p-n junctionsSolid-State Electronics, 1967
- Depletion-Layer Capacitance of p+n Step JunctionsJournal of Applied Physics, 1967
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939