Optical properties of single-crystal titanium disilicide
- 15 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (3), 1611-1615
- https://doi.org/10.1103/physrevb.40.1611
Abstract
The near-normal reflectivity of single-crystal from 0.01 to 8 eV and the dielectric functions obtained by Kramers-Kronig (KK) analysis are presented. The effect of an oxide overlayer on the optical properties is also considered. The low-energy response is discussed in terms of the Drude model; the higher-energy spectrum is interpreted on the basis of available information about the electronic structure. A comparison is made with the optical properties of pure Ti and other refractory-metal silicides.
Keywords
This publication has 29 references indexed in Scilit:
- Titanium silicides formed by rapid thermal vacuum processingJournal of Applied Physics, 1988
- Electrical transport and i n s i t u x-ray studies of the formation of TiSi2 thin films on SiApplied Physics Letters, 1987
- Electrical transport properties of transition-metal disilicide filmsJournal of Applied Physics, 1987
- Schottky-barrier heights of Ti andonn-type andp-type Si(100)Physical Review B, 1986
- Schottky-barrier height of a Ti-W alloy onn-type andp-type SiPhysical Review B, 1986
- Low temperature material reaction at the Ti/Si(111) interfaceJournal of Vacuum Science & Technology A, 1986
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- Chemical and structural aspects of reaction at the Ti/Si interfacePhysical Review B, 1984
- Electronic transport properties of TiSi2 thin filmsJournal of Vacuum Science & Technology B, 1984
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980