Transport properties of n-type CuGaSe2
- 1 April 2000
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 61 (4), 417-426
- https://doi.org/10.1016/s0927-0248(99)00165-8
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- n-type conduction in Ge-doped CuGaSe2Applied Physics Letters, 1999
- Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cellsProgress In Photovoltaics, 1999
- Electrical and optical characterization of ion-implanted CuGaSe2 single crystalsJournal of Applied Physics, 1998
- Photoluminescence properties of doped- and undoped-CuGaSe2 single crystalsJournal of Luminescence, 1997
- Characterization of Defect Levels in Doped and Undoped CuGaSe2 by Means of Photoluminescence MeasurementsPhysica Status Solidi (a), 1997
- Electrical and photoluminescence properties of CuInSe2 single crystalsJournal of Applied Physics, 1997
- Photoluminescence and electrical properties of Sn-doped CuGaSe2 single crystalsJournal of Applied Physics, 1996
- Impurity band inp-type β-Physical Review B, 1994
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- The Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1950