Avalanche-injected hole current in SiO2
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (9), 417-419
- https://doi.org/10.1063/1.1654437
Abstract
Results are given on the current of holes through an insulating double layer of SiO2 and Si3N4 on silicon. The holes originated from an avalanching p‐n junction in the silicon and were injected into the SiO2. The results can be explained by assuming a space‐charge‐limited hole current in the SiO2 in the presence of traps exponentially distributed in energy. A value of about 10−3 cm2V−1 sec−1 was found for μ, the hole mobility in the SiO2.Keywords
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