InGaAsP double heterostructure lasers (λ=1.3 μm) with etched reflectors

Abstract

Discrete InGaAsP double heterostructure lasers (λ=1.3 μm) have been fabricated by a novel batch process which incorporates chemically etched end reflectors. The etched‐mirror lasers have threshold current densities as low as 3.5 kA/cm². The average threshold current density for the etched‐mirror lasers is approxiamtely 40% higher than for standard cleaved‐mirror devices fabricated from the same wafer. The laser fabrication process permits batch fabrication of a much wider variety of discrete laser geometries than conventional laser‐cleaving techniques.