Lattice relaxation due to hydrogen passivation in boron-doped silicon
- 16 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (20), 1667-1669
- https://doi.org/10.1063/1.99052
Abstract
The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10−24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.Keywords
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