RESONANT ELECTRON-PHONON SCATTERING IN POLAR SEMICONDUCTORS
- 1 July 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (1), 3-5
- https://doi.org/10.1063/1.1754948
Abstract
It is demonstrated that even in the case of weak polar coupling, certain two‐phonon scattering processes lead to rates comparable to one‐phonon scattering. This additional scattering will influence the electron distributions and velocity‐field characteristics calculated for polar semiconductors.Keywords
This publication has 6 references indexed in Scilit:
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967
- VARIATION OF DRIFT VELOCITY WITH FIELD IN GaAsApplied Physics Letters, 1966
- Calculation of the velocity-field characteristic for gallium arsenidePhysics Letters, 1966
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- Approach to Equilibrium in Quantal Systems. II. Time-Dependent Temperatures and Magnetic ResonancePhysical Review B, 1963
- Lattice Absorption in Gallium ArsenideJournal of Applied Physics, 1961