Defect and phonon effects in In1−χGaχP p-n tunnel junctions
- 1 September 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (17), 1531-1536
- https://doi.org/10.1016/0038-1098(71)90172-4
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Anomalous Metal-Semiconductor Tunneling Near the Mott TransitionPhysical Review Letters, 1971
- SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxPApplied Physics Letters, 1971
- Optical Phonons in Metal-Semiconductor Tunnel JunctionsPhysical Review B, 1970
- STIMULATED EMISSION IN In1 -xGaxPApplied Physics Letters, 1970
- Collective Excitation Spectroscopy in Superconductor-Semiconductor Tunnel JunctionsPhysical Review B, 1970
- Plasmon Excitation by Electron TunnelingPhysical Review B, 1969
- Analysis of the Tunneling Measurement of Electronic Self-Energies Due to Interactions of Electrons and Holes with Optical Phonons in SemiconductorsPhysical Review B, 1969
- Band Structure Parameters Deduced from Tunneling ExperimentsJournal of Applied Physics, 1961
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Direct Observation of Polarons and Phonons During Tunneling in Group 3-5 Semiconductor JunctionsPhysical Review Letters, 1960