SiC Integrated MOSFETs
- 1 July 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 162 (1), 369-388
- https://doi.org/10.1002/1521-396x(199707)162:1<369::aid-pssa369>3.0.co;2-4
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Nitrogen Ion Implantation and Thermal Annealing in 6H–SiC Single CrystalJapanese Journal of Applied Physics, 1996
- Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide StructureJapanese Journal of Applied Physics, 1995
- Critical nature of oxide/interface quality for SiC power devicesMicroelectronic Engineering, 1995
- Power semiconductor devices for variable-frequency drivesProceedings of the IEEE, 1994
- High-Power ElectronicsScientific American, 1993
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Oxidation Kinetics of Silicon Carbide Crystals and Ceramics: I, In Dry OxygenJournal of the American Ceramic Society, 1986
- Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS StructureJapanese Journal of Applied Physics, 1982
- Oxidation of 6H‐α Silicon Carbide PlateletsJournal of the American Ceramic Society, 1975