Zinc segregation in CdZnTe grown under Cd/Zn partial pressure control
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4), 276-280
- https://doi.org/10.1016/0022-0248(92)90759-c
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Crystalline and chemical quality of CdTe and Cd1-xZnxTe grown by the Bridgman method in low temperature gradientsJournal of Crystal Growth, 1990
- Cdte and CdZnTe crystal growth by horizontal bridgman techniqueJournal of Crystal Growth, 1990
- Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxyJournal of Crystal Growth, 1990
- Crystalline perfection of melt-grown CdTeJournal of Crystal Growth, 1990
- Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTeJournal of Crystal Growth, 1989
- Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman processJournal of Crystal Growth, 1988
- Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTeJournal of Crystal Growth, 1988
- Evidence for bond strengthening in Cd1−xZnxTe (x=0.04)Applied Physics Letters, 1985
- Effects influencing the structural integrity of semiconductors and their alloysJournal of Vacuum Science & Technology A, 1985
- Effect of growth parameters on compositional variations in directionally solidified HgCdTe alloysJournal of Crystal Growth, 1984