Nano-Optical Studies of Individual Nanostructures
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8S)
- https://doi.org/10.1143/jjap.34.4392
Abstract
Optical techniques play a significant role in studies of nano-structures. The electronic structures of quantum dots, for example, vary with the geometric sizes in an ensemble, resulting in broadened spectral lines. Recently, different forms of local spectroscopic techniques have been applied to investigate such inhomogeneously broadened emission lines. In this paper we report on three methods for local spectroscopy: cathodo-luminescence, luminescence induced by a scanning tunnel microscope and microphotoluminescence. Each of these techniques is shown to have the capacity to investigate single quantum dots, with linewidths in the range 40–1000 µeV. Besides demonstrating the possibility of imaging and spectroscopically studing individual dots, we also demonstrate the possibility of investigating single impurity atoms, in imaging as well as in emission spectroscopy modes.Keywords
This publication has 12 references indexed in Scilit:
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994
- Atomic structure and luminescence excitation of GaAs/(AlAs)n(GaAs)m quantum wires with the scanning tunneling microscopeApplied Physics Letters, 1994
- Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs StructurePhysical Review Letters, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Scanning tunneling microscope and electron beam induced luminescence in quantum wiresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Near-Field Spectroscopy of the Quantum Constituents of a Luminescent SystemScience, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Resonant tunneling through the bound states of a single donor atom in a quantum wellPhysical Review Letters, 1992
- Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlatticesAdvances in Physics, 1991
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984