Peaked Schottky-barrier solar cells by Al-Si metallurgical reactions
- 15 June 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (12), 643-645
- https://doi.org/10.1063/1.89269
Abstract
The dark currents in Al‐nSi Schottky‐barrier solar cells are appreciably reduced by low‐temperature heat treatments (T<577 °C) which induce metallurgical reactions between the Al and Si. Open‐circuit voltages of these cells can be increased by more than 0.2 V as a result of this mechanism.Keywords
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