Identification of the residual acceptors in undoped high purity InP
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 319-321
- https://doi.org/10.1063/1.94738
Abstract
The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7–20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109–5×1011 cm−2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.Keywords
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