Photoluminescence as a diagnostic of semiconductors
- 31 December 1982
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 5 (1-2), 89-174
- https://doi.org/10.1016/0146-3535(82)90010-7
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Exciton localisation at impurity pairs in zinc telluride and indium phosphideSolid-State Electronics, 1978
- Resonant Raman scattering versus hot electron effects in excitation spectra of CdTeSolid-State Electronics, 1978
- The generation of point defects in GaAs by electron-hole recombination at dislocationsSolid-State Electronics, 1978
- Impurity Interaction on Excited Acceptor States in GaPPhysica Status Solidi (b), 1978
- Excited donor and acceptor states in zinc tellurideZeitschrift für Physik B Condensed Matter, 1978
- New aspects of the magnetoluminescence of a band to acceptor transition in GaAsPhysica Status Solidi (b), 1976
- Kinetics of recombination in nitrogen-doped GaPJournal of Applied Physics, 1974
- Nuclear microanalysis of oxygen concentration in liquid-phase epitaxial gallium phosphideJournal of Applied Physics, 1973
- Intrinsic and extrinsic edge luminescence in epitaxial GaPJournal of Physics C: Solid State Physics, 1968
- Spectral Distribution of PhotoconductivityPhysical Review B, 1956