Defect Centers in GaAs Produced by Cu Diffusion
- 1 October 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (11), 4339-4345
- https://doi.org/10.1063/1.1709126
Abstract
Evidence for defect centers having an ionization energy at Ev+0.10 eV in melt‐grown GaAs is given based on: (1) Hall‐effect measurements on Cu‐diffused crystals. (2) Residual 64Cu left in GaAs after extraction by indium. (3) Decrease in electron concentration of donor‐doped crystals after annealing. The failure to observe the defect level in photoluminescence is discussed. The results suggest that Ga vacancies are present in clusters in melt‐grown GaAs crystals.Keywords
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