Tunneling current through self-assembled InAs quantum dots embedded in symmetric and asymmetric AlGaAs barriers
- 1 July 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (7-8), 1303-1307
- https://doi.org/10.1016/s0038-1101(98)00021-5
Abstract
No abstract availableKeywords
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