Gallium arsenide field-effect transistors by ion implantation
- 1 August 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (8), 3685-3687
- https://doi.org/10.1063/1.1663838
Abstract
Gallium arsenide Schottky‐barrier field‐effect transistors have been fabricated in an n‐type film produced by sulfur implantation in a Cr‐doped semi‐insulating GaAs substrate. The conditions of the implantation and the resulting electrical properties of the film are presented. The FET devices are described and the measured current‐voltage characteristics of this device are discussed.Keywords
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