1.54 μm photoluminescence of erbium-implanted silicon
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 4 (1-4), 75-77
- https://doi.org/10.1016/0921-5107(89)90219-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Behaviour of erbium implanted in InPJournal of Electronic Materials, 1988
- Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductorsElectronics Letters, 1988
- Erbium-doped GaAs light-emitting diode at 1.54 μmElectronics Letters, 1988
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985