Behaviour of erbium implanted in InP
- 1 September 1988
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (5), 351-354
- https://doi.org/10.1007/bf02652117
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Erbium doping of molecular beam epitaxial GaAsApplied Physics Letters, 1987
- Nondiffusion and 1.54/μm luminescence of erbium implanted in InPElectronics Letters, 1987
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986