Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors
- 28 December 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (26), 3941-3943
- https://doi.org/10.1063/1.122943
Abstract
We have grown highly oriented lead zirconate titanate [Pb(Zr, Ti)O3 or PZT] films on oxidized silicon substrates using a thin MgO buffer layer (7–70 nm thick). Ferroelectric nonvolatile memory field-effect transistors (FETs) were successfully fabricated using the metal/PZT/MgO/SiO2/Si structure in conjunction with radio-frequency sputter deposition of PZT and MgO films. The fabricated devices show excellent performance in ferroelectric polarization switching and memory retention. The results indicate that a thin MgO buffer serves well not only as a template layer for the growth of oriented PZT films on amorphous substrates, but also as a diffusion barrier between a ferroelectric and a substrate during device fabrication, protecting the SiO2/Si interface and the FET channel region.Keywords
This publication has 13 references indexed in Scilit:
- SrBi 2 Ta 2 O 9 memory capacitor on Si with a silicon nitride bufferApplied Physics Letters, 1998
- Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistorApplied Physics Letters, 1997
- Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconiaApplied Physics Letters, 1997
- Temperature dependence of lead loss in r.f. magnetron sputtering of a stoichiometric Pb(Zr,Ti)O3 targetThin Solid Films, 1997
- Crystallization of Pb(Zr,Ti)O3 films prepared by radio frequency magnetron sputtering with a stoichiometric oxide targetJournal of Vacuum Science & Technology A, 1995
- Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO2 Buffer LayerJapanese Journal of Applied Physics, 1994
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992
- Ferroelectric switching of a field-effect transistor with a lithium niobate gate insulatorApplied Physics Letters, 1991
- Growth and characterization of ferroelectric BaMgF4 filmsJournal of Vacuum Science & Technology A, 1991
- Pulsed laser deposition and ferroelectric characterization of bismuth titanate filmsApplied Physics Letters, 1991