Micro-Probe Reflection High-Energy Electron Diffraction Technique. II. Observation of Aluminum Epitaxial Growth on a Polycrystal-Silicon Surface by Vacuum Evaporation

Abstract

A micro-probe reflection high-energy electron diffraction (micro-probe RHEED) technique has been used to observe the epitaxial growth of Al at room temperature on a polycrystal-Si (poly-Si) surface. A new beam-scanning method has also been developed to remove the image-shortening effect caused by a small glancing angle of incidence. From the Auger electron intensities, diffraction patterns and RHEED microscope images of an Al-deposited poly-Si surface, it is found that an Al film several atomic layers thick with the Al lattice constant grows epitaxially on the poly-Si surface with almost uniform sticking probability. The results show that the micro-probe RHEED technique is useful in studying the crystal growth of materials deposited on crystal surfaces, especially on polycrystal surfaces.