Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment
- 30 April 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (4), 403-407
- https://doi.org/10.1016/0038-1101(72)90111-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- TYPE CONVERSION AND n-p JUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971
- n-p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971
- n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENTApplied Physics Letters, 1970
- PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODESApplied Physics Letters, 1966