The interfacial layer in MIS amorphous silicon solar cells
- 1 January 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1), 548-550
- https://doi.org/10.1063/1.325651
Abstract
When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open‐circuit voltage and the short‐circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space‐charge region.Keywords
This publication has 21 references indexed in Scilit:
- Amorphous silicon MIS solar cellsNature, 1978
- MIS diodes on amorphous siliconSolid-State Electronics, 1978
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- Model calculations for metal-insulator-semiconductor solar cellsSolid-State Electronics, 1977
- Surface states and barrier heights of metal-amorphous silicon schottky barriersSolid State Communications, 1977
- Theory of the Schottky barrier solar cellProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977
- Ageing in ZnSe:Mn light emitting diodesSolid-State Electronics, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. ExperimentSolid-State Electronics, 1974
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974