MIS diodes on amorphous silicon
- 28 February 1978
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (2), 489-491
- https://doi.org/10.1016/0038-1101(78)90286-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Photovoltaic effect in MIS diodes or Schottky diodes with an interfacial layerApplied Physics Letters, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971