Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations
- 1 December 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 236 (1-2), 319-324
- https://doi.org/10.1016/0040-6090(93)90689-m
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Silicide formation and phase separation from Cu/Nb and Nb/Cu bilayers on siliconThin Solid Films, 1992
- Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systemsJournal of Materials Research, 1992
- Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additionsJournal of Applied Physics, 1992
- Performance of W100−xNx diffusion barriers between 〈Si〉 and CuApplied Surface Science, 1991
- Tantalum-based diffusion barriers in Si/Cu VLSI metallizationsJournal of Applied Physics, 1991
- Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structuresJournal of Applied Physics, 1991
- Effects of oxygen in TiNx on the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structuresApplied Physics Letters, 1991
- Reactively sputtered TiN as a diffusion barrier between Cu and SiJournal of Applied Physics, 1990
- Ta as a barrier for the Cu/PtSi, Cu/Si, and Al/PtSi structuresJournal of Vacuum Science & Technology A, 1990
- Diffusion barriers in thin filmsThin Solid Films, 1978