The formation of SiO2 films on silicon by high dose oxygen ion implantation
- 1 December 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 98 (3), 229-232
- https://doi.org/10.1016/0040-6090(82)90405-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
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- Error analysis of surface state density determination using the MOS capacitance methodSolid-State Electronics, 1969