Properties of SiO2 films formed by oxygen implantation into silicon
- 1 January 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 48 (2), 187-192
- https://doi.org/10.1016/0040-6090(78)90240-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristicsThin Solid Films, 1976
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
- Model calculations of profiles and dose of high dose ion implants influenced by sputteringNuclear Instruments and Methods, 1976
- Static technique for precise measurements of surface potential and interface state density in MOS structuresApplied Physics Letters, 1975
- Contributions of Oxygen, Silicon, and Hydrogen to the Interface States of an Si ‐ SiO2, InterfaceJournal of the Electrochemical Society, 1974
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972
- Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical MeasurementsJournal of the Electrochemical Society, 1972
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966