Deep-level distributions near p-n junctions in LPE GaAs

Abstract

Deep‐level concentrations near p‐n junctions in LPE GaAs have been studied by the capacitance spectroscopy method. Two deep levels which are characteristic of LPE growth were measured within a few μm of the junction in both p⁺n and n⁺p diodes. The results indicate a uniform concentration of (6–9) ×10¹⁴ cm⁻³ for these levels in n‐type GaAs, but an extremely large variation from 3×10¹³ to 10¹⁵ cm⁻³ within 1 μm of the junction in p‐type GaAs. In addition some samples show Cu and Fe contamination in the low 10¹⁴‐cm⁻³ range due to diffusion from the LPE‐substrate interface.