Growth and characterization of GaAs films on porous Si
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 113-116
- https://doi.org/10.1016/0022-0248(89)90362-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth and characterization of molecular beam epitaxial GaAs layers on porous siliconApplied Physics Letters, 1987
- Effects of the Substrate Offset Angle on the Growth of GaAs on Si SubstrateJapanese Journal of Applied Physics, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Microstructure of Porous silicon and its evolution with temperatureMaterials Letters, 1984
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984