Concentration profiles and sputtering yields measured by optical radiation of sputtered particles

Abstract

The possibility of using the optical radiation from sputtered atoms to measure concentration distributions and sputtering yields is examined. Continuous sample surface peeling is achieved by sputter-etching with energetic Ar⁺ ion beams. It is shown that very thin layers (∼15 A), introduced in a substrate, can be detected with this technique. Hereby recoil collision processes are investigated. Sputtering yields of Ar⁺ ions bombarding Ag, Au, Cu and Al are determined and compared to other measurements and theory. Studies of Al ions implanted into Ag have been done for energies between 50 and 120 keV, as well as 60 keV Na ions into Si. Projected ranges and range stragglings are presented and compared to theory.